FT-335四探針電阻率測試儀參數資料：

1.方塊(kuai)電阻范圍：10-2～2×105Ω/□。

2.電(dian)阻率范圍：10-3～2×106Ω-cm。

3.測試電流范圍：0.1μA，1μA，10μA，100µA，1mA，10mA，100 mA。

4.電流精度：±0.3%讀數。

5.電阻精度：≤0.5%。

6.顯(xian)示(shi)讀數(shu)：液晶顯(xian)示(shi)：電(dian)阻、電(dian)阻率、方阻、溫度、單位(wei)換算、溫度系數(shu)、電(dian)流、電(dian)壓(ya)、探針形狀、探針間距、厚(hou)度 、電(dian)導率。

7.測試方式: 普通(tong)單電測量。

8.工作電源(yuan): 輸入: AC 220V±10% ,50Hz  功耗：<30W。

9.整機不確定性誤差: ≤4%（標準樣片(pian)結果）。

10.選(xuan)購(gou)功能: 選(xuan)購(gou)1.pc軟件； 選(xuan)購(gou)2.方(fang)形探(tan)(tan)頭； 選(xuan)購(gou)3.直(zhi)線形探(tan)(tan)頭； 選(xuan)購(gou)4.測(ce)試(shi)平臺。

11.測試探頭：   探針間距選(xuan)購(gou)：1mm；2mm；3mm三種規格; 探針材質(zhi)選(xuan)購(gou)：碳化(hua)鎢針;白鋼(gang)針；鍍金磷(lin)銅半(ban)球形針。

FT-335四探針電阻率測試儀按照硅片(pian)電(dian)(dian)阻率測(ce)量的標準（ASTM F84）及標準設計制造(zao)該儀器設計符合GB/T 1551-2009 《硅單晶電(dian)(dian)阻率測(ce)定方法》、GB/T 1551-1995《硅、鍺單晶電(dian)(dian)阻率測(ce)定直流兩探針法》、

GB/T 1552-1995《硅、鍺單晶(jing)電阻率測定(ding)直流(liu)四(si)探(tan)針法》并參考美國 A.S.T.M 標準，本(ben)機配(pei)置(zhi)232電腦接口及USB兩種接口，本(ben)機結(jie)合采用范(fan)德堡測量原理能改善樣品(pin)因幾何尺寸、邊(bian)界效應(ying)、探(tan)針不等(deng)距和機械游(you)移等(deng)外部因素對(dui)測量結(jie)果(guo)的(de)影響(xiang)及誤差，比(bi)市(shi)場上其他普通的(de)四(si)探(tan)針測試方法更加完善和進步(bu),特別是方塊電阻值較小的(de)產品(pin)測量，準確(que)。

本儀器本儀器采用(yong)四探(tan)針單電(dian)測量法適(shi)用(yong)于生產(chan)企業(ye)、高(gao)等院校、科(ke)研(yan)部門，是(shi)檢驗和(he)分析導體(ti)材(cai)料和(he)半導體(ti)材(cai)料質量的(de)一種重要的(de)工具。

本儀器配(pei)置(zhi)各類(lei)測量裝置(zhi)可以測試不同材(cai)料。

液晶顯示，無(wu)需人(ren)工(gong)計(ji)算(suan)，并帶有溫度補(bu)償(chang)功能，電阻率單位(wei)自(zi)(zi)動選擇，儀器自(zi)(zi)動測量并根(gen)據(ju)測試結果自(zi)(zi)動轉換量程，無(wu)需人(ren)工(gong)多次和(he)重復設置。

采(cai)用高精(jing)度AD芯片控制，恒流(liu)輸出，結構合理、質量(liang)輕(qing)便(bian)，運(yun)輸安全、使用方便(bian)；選配：配備(bei)軟件(jian)可(ke)以(yi)(yi)由電(dian)(dian)腦操控，并保存和打印數據，自動生成報(bao)表；本儀器采(cai)用4.3吋大液晶屏幕(mu)顯示(shi)，同(tong)時顯示(shi)液晶顯示(shi)：電(dian)(dian)阻、電(dian)(dian)阻率、方阻、溫(wen)度、單(dan)位換(huan)算、溫(wen)度系數、電(dian)(dian)流(liu)、電(dian)(dian)壓、探(tan)針(zhen)形(xing)狀、探(tan)針(zhen)間距、厚度 、電(dian)(dian)導率，配置不同(tong)的測試(shi)治具(ju)可(ke)以(yi)(yi)滿足不同(tong)材料的測試(shi)要(yao)求(qiu)。測試(shi)治具(ju)可(ke)以(yi)(yi)根據產品及測試(shi)項目(mu)要(yao)求(qiu)選購。

廣泛(fan)用于：覆(fu)蓋膜;導電(dian)高分(fen)子膜，高、低溫電(dian)熱膜;隔熱、防輻(fu)射(she)導電(dian)窗(chuang)膜 導電(dian)(屏蔽)布、裝飾膜、裝飾紙;金屬化標簽(qian)、

合金類(lei)箔膜;熔煉、燒結、濺射、涂(tu)覆、涂(tu)布層，電(dian)(dian)(dian)(dian)(dian)阻(zu)式、電(dian)(dian)(dian)(dian)(dian)容式觸屏薄(bo)(bo)膜;電(dian)(dian)(dian)(dian)(dian)極(ji)涂(tu)料，其他半導(dao)體(ti)材(cai)(cai)料、薄(bo)(bo)膜材(cai)(cai)料方(fang)阻(zu)測試、硅晶塊、晶片(pian)電(dian)(dian)(dian)(dian)(dian)阻(zu)率(lv)及(ji)擴(kuo)散(san)層、外延層、ITO導(dao)電(dian)(dian)(dian)(dian)(dian)箔膜、導(dao)電(dian)(dian)(dian)(dian)(dian)橡膠等(deng)材(cai)(cai)料方(fang)塊電(dian)(dian)(dian)(dian)(dian)阻(zu)  半導(dao)體(ti)材(cai)(cai)料/晶圓(yuan)、太陽能電(dian)(dian)(dian)(dian)(dian)池、電(dian)(dian)(dian)(dian)(dian)子(zi)元器件，導(dao)電(dian)(dian)(dian)(dian)(dian)薄(bo)(bo)膜（ITO導(dao)電(dian)(dian)(dian)(dian)(dian)膜玻璃等(deng)），金屬膜，導(dao)電(dian)(dian)(dian)(dian)(dian)漆膜，蒸發鋁膜，PCB銅箔膜，EMI涂(tu)層等(deng)物(wu)質的薄(bo)(bo)層電(dian)(dian)(dian)(dian)(dian)阻(zu)與電(dian)(dian)(dian)(dian)(dian)阻(zu)率(lv)  導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)油漆，導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)糊(hu)狀(zhuang)物(wu)，導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)塑料，導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)橡膠，導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)薄(bo)(bo)膜，金屬薄(bo)(bo)膜，抗(kang)靜(jing)電(dian)(dian)(dian)(dian)(dian)材(cai)(cai)料，EMI 防(fang)護材(cai)(cai)料，導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)纖維，導(dao)電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)(xing)陶瓷等(deng)。